| Autor: |
Talukder, B. M. S. Bahar, Kerns, Joseph, Ray, Biswajit, Morris, Thomas, Rahman, Md Tauhidur |
| Rok vydání: |
2018 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1109/ICCE.2019.8662060 |
| Popis: |
True random number generator (TRNG) plays a vital role in a variety of security applications and protocols. The security and privacy of an asset rely on the encryption, which solely depends on the quality of random numbers. Memory chips are widely used for generating random numbers because of their prevalence in modern electronic systems. Unfortunately, existing Dynamic Random-access Memory (DRAM)-based TRNGs produce random numbers with either limited entropy or poor throughput. In this paper, we propose a DRAM-latency based TRNG that generates high-quality random numbers. The silicon results from Samsung and Micron DDR3 DRAM modules show that our proposed DRAM-latency based TRNG is robust (against different operating conditions and environmental variations) and acceptably fast. |
| Databáze: |
arXiv |
| Externí odkaz: |
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