Theoretical investigation of electronic properties of highly charged fullerenes. Systems of discrete short-lived volume-localized levels
| Autor: | Arutyunyan, Rafael V |
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| Rok vydání: | 2018 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We study the electronic properties of charged fullerenes and onion-like structures in the framework of a simple physical model and show the existence of a system of discrete short-lifetime quantum levels for electrons in the model well potential. In the case of positively charged fullerenes, we find that the energy of the volume-localized levels ranges from 1 eV to 100 eV. Electrons captured by these discrete levels localized in the volume generate a specific nano-atom wherein electrons are localized inside a charged hollow sphere of fullerene playing the role of a nucleus in an atom. In case of negatively charged single-layered or onion-like structure fullerenes, Coulomb field creates a spherical potential well for positively charged particles (protons, nuclei of deuterium, tritium or {\mu}+- mesons). In such a case, a system of discrete levels for positively charged particles is created wherein protons act as electrons and negatively charged sphere of fullerene plays the role of a nucleus. Comment: 16 pages, 5 figures, preprint |
| Databáze: | arXiv |
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