Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells
Autor: | Aeberhard, Urs, Gonzalo, Alicia, Ulloa, Jose María |
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Rok vydání: | 2018 |
Předmět: | |
Druh dokumentu: | Working Paper |
DOI: | 10.1063/1.5030625 |
Popis: | Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and of the spectral current flow enables the identification of different regimes for carrier localization, transport, and extraction as a function of configurational parameters. These include the number of periods, the thicknesses of the individual layers in one period, the built-in electric field, and the temperature of operation. The results for the carrier extraction efficiency are related to experimental data for different symmetric GaAsSb/GaAsN type-II quantum well superlattice solar cell devices and provide a qualitative explanation for the experimentally observed dependence of photovoltaic device performance on period thickness. Comment: 5 pages, 7 figures; accepted for publication in Applied Physics Letters |
Databáze: | arXiv |
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