| Autor: |
Brown, E. R., Zhang, W-D., Growden, T. A., Berger, P. R., Droopad, R. |
| Rok vydání: |
2018 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
We report strong light emission from a room-temperature n-type unipolar-doped In0.53Ga0.47As/AlAs double-barrier resonant-tunneling diode (DBRTD) precisely at the In0.53Ga0.47As band-edge near 1650 nm. The emission characteristics are very similar to what was observed recently in GaN/AlN DBRTDs, both of which suggest that the mechanism for emission is cross-gap electron-hole recombination via resonant- and Zener co-tunneling of electrons, the latter mechanism generating the required holes. Analysis shows that because of the relatively small bandgap, the Zener tunneling probability can be large in this In0.53Ga0.47As/AlAs DBRTD, and is a mechanism that may have been overlooked in the longstanding literature. The universal nature of the co-tunneling is best supported by the factor (EG)2/F in the Kane tunneling probability, which is nearly the same at the peak voltage of the In0.53Ga0.47As and GaN DBRTDs. |
| Databáze: |
arXiv |
| Externí odkaz: |
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