Spectral dynamics of topological shift-current in ferroelectric semiconductor SbSI
Autor: | Sotome, M., Nakamura, M., Fujioka, J., Ogino, M., Kaneko, Y., Morimoto, T., Zhang, Y., Kawasaki, M., Nagaosa, N., Tokura, Y., Ogawa, N. |
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Rok vydání: | 2018 |
Předmět: | |
Druh dokumentu: | Working Paper |
DOI: | 10.1073/pnas.1802427116 |
Popis: | Photoexcitation in solids brings about transitions of electrons/holes between different electronic bands. If the solid lacks an inversion symmetry, these electronic transitions support spontaneous photocurrent due to the topological character of the constituting electronic bands; the Berry connection. This photocurrent, termed shift current, is expected to emerge on the time-scale of primary photoexcitation process. We observed ultrafast time evolution of the shift current in a prototypical ferroelectric semiconductor by detecting emitted terahertz electromagnetic waves. By sweeping the excitation photon energy across the band gap, ultrafast electron dynamics as a source of terahertz emission abruptly changes its nature, reflecting a contribution of Berry connection upon interband optical transition. The shift excitation carries a net charge flow, and is followed by a swing-over of the electron cloud on the sub-picosecond time-scale of electron-phonon interaction. Understanding these substantive characters of the shift current will pave the way for its application to ultrafast sensors and solar cells. Comment: 19 pages, 5 figures |
Databáze: | arXiv |
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