Autor: |
Vasilyev, Yu. B., Vasileva, G. Yu., Novikov, S., Tarasenko, S. A., Danilov, S. N., Ganichev, S. D. |
Rok vydání: |
2017 |
Předmět: |
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Druh dokumentu: |
Working Paper |
DOI: |
10.1063/1.5013100 |
Popis: |
We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions. |
Databáze: |
arXiv |
Externí odkaz: |
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