High-frequency rectification in graphene lateral p-n junctions

Autor: Vasilyev, Yu. B., Vasileva, G. Yu., Novikov, S., Tarasenko, S. A., Danilov, S. N., Ganichev, S. D.
Rok vydání: 2017
Předmět:
Druh dokumentu: Working Paper
DOI: 10.1063/1.5013100
Popis: We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.
Databáze: arXiv