Silicon-Oxide Interfaces: Structure and Electronic Properties

Autor:	Fedorenko, Y. G.
Jazyk:	ruština
Rok vydání:	2017
Předmět:	Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
Popis:	The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of archetypical structural defects of the Si/SiO2 interface is given. Comment: (in Russian)
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1709.01917 Zobrazit plný text záznamu View this record from Arxiv