| Autor: |
Bubis, A. V., Denisov, A. O., Piatrusha, S. U., Batov, I. E., Becker, J., Treu, J., Ruhstorfer, D., Koblmüller, G., Khrapai, V. S. |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
Semicond. Sci. Technol. 32 094007 (2017) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1088/1361-6641/aa7eef |
| Popis: |
We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap values ($\Delta_N$) close to the Al gap ($\Delta_0$). At decreasing $V_g$, we observe a reduction of the proximity gap down to $\Delta_N\approx\Delta_0/2$ at NW conductances $\sim2e^2/h$, which is interpreted in terms of carrier density dependent reduction of the Al/InAs interface transparency. We demonstrate that the experimental behavior of $\Delta_N$ is closely reproduced by a model with shallow potential barrier at the Al/InAs interface. |
| Databáze: |
arXiv |
| Externí odkaz: |
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