Enhanced spin lifetimes in a two dimensional electron gas in a gate-controlled GaAs quantum well

Autor:	Anghel, Sergiu, Singh, Akshay, Passmann, Felix, Iwata, Hikaru, Moore, Nick, Yusa, Go, Li, Xiaoqin, Betz, Markus
Rok vydání:	2016
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics 00A82
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevB.94.035303
Popis:	Exciton, trion and electron spin dynamics in a 20 nm wide modulation-doped GaAs single quantum well are investigated using resonant ultrafast two-color Kerr rotation spectroscopy. Excitons and trions are selectively detected by resonant probe pulses while their relative spectral weight is controlled by adjusting the gate voltage which tunes the carrier density. Tuning the carrier density markedly influences the spin decay time of the two dimensional electron gas. The spin decay time can be enhanced by a factor of 3 at an intermediate carrier concentration in the quantum well, where excitons and trions coexist in the system. In addition, we explore the capability to tune the g-factor of the electron gas via the carrier density. Comment: 6 pages, 5 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1605.01771 Zobrazit plný text záznamu View this record from Arxiv