| Autor: |
Lev, Leonid L., Averyanov, Dmitry V., Tokmachev, Andrey M., Bisti, Federico, Rogalev, Victor A., Strocov, Vladimir N., Storchak, Vyacheslav G. |
| Rok vydání: |
2016 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| Popis: |
Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system. |
| Databáze: |
arXiv |
| Externí odkaz: |
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