| Autor: |
Nardo, Roberto Lo, Wolfowicz, Gary, Simmons, Stephanie, Tyryshkin, Alexei M., Riemann, Helge, Abrosimov, Nikolai V., Becker, Peter, Pohl, Hans-Joachim, Steger, Michael, Lyon, Stephen A., Thewalt, Mike L. W., Morton, John J. L. |
| Rok vydání: |
2015 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevB.92.165201 |
| Popis: |
Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation ($T_1$) and coherence ($T_2$) times of Se$^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\sim 15$ K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se$^0$. |
| Databáze: |
arXiv |
| Externí odkaz: |
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