Percolation conductivity in hafnium sub-oxides
Autor: | Islamov, D. R., Gritsenko, V. A., Cheng, C. H., Chin, A. |
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Rok vydání: | 2014 |
Předmět: | |
Zdroj: | Appl. Phys. Lett. 105 (2014) 262903 |
Druh dokumentu: | Working Paper |
DOI: | 10.1063/1.4905308 |
Popis: | In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfO$_x$, $x<2$) leads to percolation charge transport in such dielectrics. Basing on the model of \'{E}fros-Shklovskii percolation theory good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. Based on the percolation theory suggested model shows that hafnium sub-oxides consist of mixtures of metallic Hf nanoscale clusters of 1-2 nm distributed onto non-stoichiometric HfO$_x$. It was shown that reported approach might describe low resistance state current-voltage characteristics of resistive memory elements based on HfO$_x$. Comment: 3 pages, 2 figures |
Databáze: | arXiv |
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