Perfect memristor: non-volatility, switching and negative differential resistance
| Autor: | Savel'ev, Sergey E., Marchesoni, Fabio, Bratkovsky, Alexander M. |
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| Rok vydání: | 2013 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule's heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and a negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise spectra of the switch exhibit $1/f^2\rightarrow 1/f$ crossover, in agreement with recent experimental results. Comment: 5 pages, 3 figures |
| Databáze: | arXiv |
| Externí odkaz: |
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