Metal silicide/poly-Si Schottky diodes for uncooled microbolometers
| Autor: | Chizh, K. V., Chapnin, V. A., Kalinushkin, V. P., Resnik, V. Ya., Storozhevykh, M. S., Yuryev, V. A. |
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| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | Nanoscale Research Letters 2013, 8:177 (URL: http://www.nanoscalereslett.com/content/8/1/177) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1186/1556-276X-8-177 |
| Popis: | Nickel silicide Schottky diodes formed on polycrystalline Si films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as multi-phase compound composed by 20 to 40% of Ni3Si, 30 to 60% of Ni2Si and 10 to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from ~100 to ~20 for the temperature increasing from 22 to 70C; they exceed 1000 at 80K. A barrier of ~0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-emf spectra at 80K and attributed to the Ni-silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3 to 0.6%/K for forward biasing and around 2.5%/K for reverse biasing of the diodes. Comment: 18 pages, 7 figures |
| Databáze: | arXiv |
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