Using x-ray diffraction to identify precipitates in transition metal doped semiconductors
| Autor: | Zhou, Shengqiang, Potzger, K., Talut, G., von Borany, J., Skorupa, W., Helm, M., Fassbender, J. |
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| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | J. Appl. Phys. 103, 07D530 (2008) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.2828710 |
| Popis: | In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated the structural and magnetic properties of transition metal doped ZnO, TiO2, and Si, prepared by ion implantation. Crystalline precipitates, i.e., transition metal (Co, Ni) and Mn-silicide nanocrystals, are responsible for the magnetism. Additionally due to their orientation nature with respect to the host, these nanocrystals in some cases are not detectable by conventional x-ray diffraction (XRD). This nature results in the pitfall of using XRD to exclude magnetic precipitates in DMS materials. Comment: 7 pages, 5 figures |
| Databáze: | arXiv |
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