| Autor: |
Roche, B., Riwar, R. -P., Voisin, B., Dupont-Ferrier, E., Wacquez, R., Vinet, M., Sanquer, M., Splettstoesser, J., Jehl, X. |
| Rok vydání: |
2012 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1038/ncomms2544 |
| Popis: |
The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two such devices. The next step towards promising functionalities for future nanoelectronics consists in manipulating a single electron over two dopants. Here we demonstrate electron pumping through two phosphorus donors in series implanted in a silicon nanowire. While quantized pumping is achieved in the low frequency adiabatic regime, we observe remarkable features at higher frequency when the charge transfer is limited by the different tunneling rates. The transitions between quantum states are modeled involving a Landau-Zener transition, allowing to reproduce in detail the characteristic signatures observed in the non-adiabatic regime. |
| Databáze: |
arXiv |
| Externí odkaz: |
|
