Efficiently Engineered Room Temperature Single Photons in Silicon Carbide
| Autor: | Castelletto, S., Johnson, B. C., Stavrias, N., Umeda, T., Ohshima, T. |
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| Rok vydání: | 2012 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC is a viable material in which to realize various quantum information, computation and photonic applications. The maximum single photon count rate detected is 700k counts/s with an inferred quantum efficiency around 70%. The single photon sources are due to intrinsic deep level defects constituted of carbon antisite-vacancy pairs. These are shown to be formed controllably by electron irradiation. The variability of the temporal kinetics of these single defects is investigated in detail. Comment: 8 pages + 3 pages (supplementary) |
| Databáze: | arXiv |
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