Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide
| Autor: | Yamada, S., Tanikawa, K., Miyao, M., Hamaya, K. |
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| Rok vydání: | 2012 |
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| Zdroj: | Crystal Growth & Design vol. 12, 4703 (2012) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1021/cg300791w |
| Popis: | We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si) or iron (Fe) atoms at the surface on Fe3Si(111). The Si-terminated Fe3Si(111) surface enables us to grow two-dimensional epitaxial Ge films, whereas the Fe-terminated one causes the three-dimensional epitaxial growth of Ge films. The high-quality Ge grown on the Si-terminated surface has almost no strain, meaning that the Ge films are not grown on the low-temperature-grown Si buffer layer but on the lattice matched metallic Fe3Si. This study will open a new way for vertical-type Ge-channel transistors with metallic source/drain contacts. Comment: 5 figures |
| Databáze: | arXiv |
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