Autor:	Matsubara, Masahiko, Amini, Mozhgan N., Saniz, Rolando, Lamoen, Dirk, Partoens, Bart
Rok vydání:	2012
Předmět:	Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevB.86.165207
Popis:	The hydrogen interstitial and the substitutional Al_Zn, Ga_Zn and In_Zn are all shallow donors in ZnO and lead to n-type conductivity. Although shallow donors are expected to repel each other, we show by first principles calculations that in ZnO these shallow donor impurities attract and form a complex, leading to a donor level deep in the band gap. This puts a limit on the n-type conductivity of (Al,Ga,In)-doped ZnO in the presence of hydrogen. Comment: 4 pages, 5 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1204.0364 Zobrazit plný text záznamu View this record from Arxiv