Vertical Graphene Base Transistor
| Autor: | Mehr, Wolfgang, Scheytt, J. Christoph, Dabrowski, Jarek, Lippert, Gunther, Xie, Ya-Hong, Lemme, Max C., Ostling, Mikael, Lupina, Grzegorz |
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| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | IEEE Electron Device Letters, vol. 33, pp. 691-693 (2012) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1109/LED.2012.2189193 |
| Popis: | We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiGe process lines. Comment: 9 pages, 3 figures; IEEE Electron Device Letters, Vol.33, Issue 5, (2012) |
| Databáze: | arXiv |
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