Electrostatic doping of graphene through ultrathin hexagonal boron nitride films
| Autor: | Bokdam, Menno, Khomyakov, Petr A., Brocks, Geert, Zhong, Zhicheng, Kelly, Paul J. |
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| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | Nano Lett., 2011, 11 (11), pp 4631-4635 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1021/nl202131q |
| Popis: | When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene doping depends on the thickness of the h-BN layer and on a potential difference applied between Cu and graphene. We develop an analytical model that describes the doping very well, allowing us to identify the key parameters that govern the device behaviour. A predicted intrinsic doping of graphene is particularly prominent for ultrathin h-BN layers and should be observable in experiment. It is dominated by novel interface terms that we evaluate from DFT calculations for the individual materials and for interfaces between h-BN and Cu or graphene. Comment: 5 pages, 4 figures |
| Databáze: | arXiv |
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