| Autor: |
Bhosle, S., Gunasekera, K., Chen, P., Boolchand, P., Micoulaut, M., Massabrio, C. |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
Solid State Communications 151, 1851-1855 (2011) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1016/j.ssc.2011.10.016 |
| Popis: |
We introduce a Raman profiling method to track homogenization of Ge$_x$Se$_{100-x}$ melts in real time, and show that 2 gram melts reacted at 950{\deg}C in high vacuum homogenize in 168 hours on a scale of 10{\mu}m. Homogenization of melts is precursive to self-organization of glasses. In the present glasses, compositional variation of Raman active corner-sharing mode frequency of GeSe$_4$ units, molar volumes, and the enthalpy of relaxation at Tg, reveal the rigidity (xc(1)= 19.5(3)%) and the stress (xc(2) = 26.0(3)%) transitions to be rather sharp ({\Delta}x < 0.6%). These abrupt elastic phase transitions are intrinsic to these materials and have a direct bearing on physics of glasses. |
| Databáze: |
arXiv |
| Externí odkaz: |
|
