Rashba spin-splitting control at the surface of the topological insulator Bi2Se3
| Autor: | Zhu, Z. -H., Levy, G., Ludbrook, B., Veenstra, C. N., Rosen, J. A., Comin, R., Wong, D., Dosanjh, P., Ubaldini, A., Syers, P., Butch, N. P., Paglione, J., Elfimov, I. S., Damascelli, A. |
|---|---|
| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | Phys. Rev. Lett. 107, 186405 (2011) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevLett.107.186405 |
| Popis: | The electronic structure of Bi2Se3 is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultra-high-vacuum conditions, can be overcome via in-situ potassium deposition. In addition to accurately setting the carrier concentration, new Rashba-like spin-polarized states are induced, with a tunable, reversible, and highly stable spin splitting. Ab-initio slab calculations reveal that these Rashba state are derived from the 5QL quantum-well states. While the K-induced potential gradient enhances the spin splitting, this might be already present for pristine surfaces due to the symmetry breaking of the vacuum-solid interface. Comment: A high-resolution version can be found at http://www.physics.ubc.ca/~quantmat/ARPES/PUBLICATIONS/Articles/BiSe_K.pdf |
| Databáze: | arXiv |
| Externí odkaz: |
|