Optical transitions and energy relaxation of hot carriers in Si nanocrystals

Autor:	Poddubny, A. N., Prokofiev, A. A., Yassievich, I. N.
Rok vydání:	2010
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1063/1.3525375
Popis:	Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and holes is found to be the fastest process in the system. However the energy relaxation of hot electron-hole pair is governed by the single optical phonon emission. For a considerable number of states in small nanocrystals single-phonon processes are ruled out by energy conservation law. Comment: 3 pages, 4 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1010.0166 Zobrazit plný text záznamu View this record from Arxiv