A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

Autor:	Sailer, J., Lang, V., Abstreiter, G., Tsuchiya, G., Itoh, K. M., Ager III, J. W., Haller, E. E., Kupidura, D., Harbusch, D., Ludwig, S., Bougeard, D.
Rok vydání:	2009
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science
Zdroj:	Phys. Status Solidi RRL 3, No. 2, 61-63 (2009)
Druh dokumentu:	Working Paper
DOI:	10.1002/pssr.200802275
Popis:	We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment. Comment: 8 pages, 3 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0901.2433 Zobrazit plný text záznamu View this record from Arxiv