Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy

Autor:	Rutter, G. M., Guisinger, N. P., Crain, J. N., Jarvis, E. A. A., Stiles, M. D., Li, T., First, P. N., Stroscio, J. A.
Rok vydání:	2007
Předmět:	Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevB.76.235416
Popis:	Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the interface structure beneath single-layer graphene using scanning tunneling microscopy. Such imaging is possible because the graphene appears transparent at energies of 1 eV above or below the Fermi energy. Our analysis of calculations based on density functional theory shows how this transparency arises from the electronic structure of a graphene layer on a SiC substrate. Comment: 18 pages, 5 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0711.2523 Zobrazit plný text záznamu View this record from Arxiv