Ferromagnetism in cobalt doped n-GaN
Autor: | Dhara, S., Sundaravel, B., Nair, K. G. M., Kesavamoorthy, R., Valsakumar, M. C., Rao, T. V. Chandrasekhar, Chen, L. C., Chen, K. H. |
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Rok vydání: | 2007 |
Předmět: | |
Zdroj: | Applied Physics Letters 88 (17) 173110 (2006) |
Druh dokumentu: | Working Paper |
DOI: | 10.1063/1.2194347 |
Popis: | Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 atomic percent Co. Particle induced x-ray emission-channeling study confirmed the substitutional Co in Ga lattice site. Local atomic arrangement around magnetic impurities is also analyzed using Raman study. A disordered model with carrier mediated coupling of localized magnetic moments is made responsible for the observed ferromagnetic ordering. Comment: 11 pages, 3 figures, Journal |
Databáze: | arXiv |
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