A cryogenic amplifier for fast real-time detection of single-electron tunneling

Autor:	Vink, I. T., Nooitgedagt, T., Schouten, R. N., Wegscheider, W., Vandersypen, L. M. K.
Rok vydání:	2007
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	Appl. Phys. Lett. 91, 123512 (2007)
Druh dokumentu:	Working Paper
DOI:	10.1063/1.2783265
Popis:	We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. We use this setup to monitor single-electron tunneling to and from an adjacent quantum dot and we measure fluctuations in the dot occupation as short as 400 nanoseconds, 20 times faster than in previous work. Comment: 4 pages, 3 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/0708.0461 Zobrazit plný text záznamu View this record from Arxiv