Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb
| Autor: | J. Buckeridge, T. D. Veal, C. R. A. Catlow, D. O. Scanlon |
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| Rok vydání: | 2019 |
| Zdroj: | Physical Review B |
| ISSN: | 2469-9950 |
| DOI: | 10.1103/physrevb.100.035207 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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