| Autor: |
Alei, Li, Qianxue, Chen, Peipei, Wang, Yuan, Gan, Tailei, Qi, Peng, Wang, Fangdong, Tang, Judy Z, Wu, Rui, Chen, Liyuan, Zhang, Youpin, Gong |
| Rok vydání: |
2018 |
| Zdroj: |
Advanced materials (Deerfield Beach, Fla.). 31(6) |
| ISSN: |
1521-4095 |
| Popis: |
2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next-generation optoelectronics since they can be stacked layer-by-layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice-mismatched semiconductors of desired functionalities but also providing a scheme to design new optoelectronics that can surpass the fundamental limitations on their conventional semiconductor counterparts. Herein, a novel 2D h-BN/p-MoTe |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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