| Autor: |
Bolun, Wang, Xuewen, Wang, Enze, Wang, Chenyu, Li, Ruixuan, Peng, Yonghuang, Wu, Zeqin, Xin, Yufei, Sun, Jing, Guo, Shoushan, Fan, Chen, Wang, Jianshi, Tang, Kai, Liu |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Nano letters. 21(24) |
| ISSN: |
1530-6992 |
| Popis: |
As essential units in an artificial neural network (ANN), artificial synapses have to adapt to various environments. In particular, the development of synaptic transistors that can work above 125 °C is desirable. However, it is challenging due to the failure of materials or mechanisms at high temperatures. Here, we report a synaptic transistor working at hundreds of degrees Celsius. It employs monolayer MoS |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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