| Autor: |
V M, Burlakov, G A, Briggs, A P, Sutton, Y, Tsukahara |
| Rok vydání: |
2000 |
| Zdroj: |
Physical review letters. 86(14) |
| ISSN: |
0031-9007 |
| Popis: |
A random network model containing defects has been developed and applied to the deposition of amorphous SiOx films on a flat substrate. A new Monte Carlo procedure enables dangling bonds to migrate and annihilate. The degree of porosity in the films is found to increase with oxygen content. As the oxygen content increases a larger fraction of pore surfaces is covered with oxygen, and the density of dangling bonds on pore surfaces decreases. Oxygen plays the role of a surfactant, lowering the energies of pore surfaces and enhancing the porosity of amorphous SiO2 compared to amorphous Si. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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