| Popis: |
An entire family of nano scale trenches, ridges, and steps has been observed experimentally on AsH3 exposed Si 100 . Some of these line structures have been observed previously, but their structures have remained a mystery. Theoretical modeling shows that they are all based upon the same stress relieving 5 7 5 core structure. The strong similarities between line structures on As Si 100 , P Si 100 , As Ge 100 , and other V IV surfaces lead to a much broader conclusion 5 7 5 line structures are a general form of stress relief for group V terminated Si and Ge surfaces |
