Monolithic integration of AlGaN/GaN HFET with MOS on silicon<111>substrates
| Autor: | Chyurlia, P. N., Semond, F., Lester, T., Bardwell, J. A., Rolfe, S., Tang, H., Tarr, N. G. |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| DOI: | 10.1049/el.2010.3167 |
| Popis: | AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|