| Autor: |
Torchia, Pasqualino, Pampili, Pietro, O'Connell, John, O'Brien, Joe, White, Mary, Schmidt, Michael, Sheehan, Brendan, Waldron, Finbarr, Holmes, Justin D., Monaghan, Scott, Duffy, Ray, Trajkovic, T., Kilchytska, V., Gammon, P. M., Cherkaoui, Karim, Hurley, Paul K., Gity, Farzan |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Popis: |
In this study, a surface activated bonding method using remote plasma is applied to realize the direct wafer bonding of Si and SiC. A comparison of different surface treatments is reported. Hydrophilic and hydrophobic wafers have been exposed to in-situ argon and nitrogen radicals generated by remote plasma for surface activation before bonding. A comparison of the bonding yield and surface condition has been conducted and analyzed as a function of the surface treatments. It has been shown that N2 plasma leads to the highest yield of > 97 %, strongest bond of > 360 N and interfacial layer (IL) thickness of ~1.5 nm. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
