| Autor: |
Arshak, Khalil, Gilmartin, Stephen L., Arshak, Arousian, Collins, Damien, Korostynska, Olga |
| Jazyk: |
angličtina |
| Rok vydání: |
2005 |
| Předmět: |
|
| Popis: |
peer-reviewed The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process has been previously reported as an excellent technique for patterning nanometer scale features in DNQ/novolak based photoresists on silicon substrates. In this paper we demonstrate that the 2-step NERIME process can be used to pattern nanometer scale resist features on different substrate materials and topography substrates. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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