Autor: |
Nowotny, U., Gotzeina, W., Hofmann, P., Hülsmann, A., Raynor, B., Schneider, J., Berroth, M., Kaufel, G., Köhler, K., Wang, Z.-G. |
Přispěvatelé: |
Publica |
Jazyk: |
angličtina |
Rok vydání: |
1992 |
Předmět: |
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Popis: |
An integrated laser diode driver was realised using enhancement/depletion 0.3 Mym recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10Gbit/s with 50 Omega loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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