15 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors

Autor: Nowotny, U., Gotzeina, W., Hofmann, P., Hülsmann, A., Raynor, B., Schneider, J., Berroth, M., Kaufel, G., Köhler, K., Wang, Z.-G.
Přispěvatelé: Publica
Jazyk: angličtina
Rok vydání: 1992
Předmět:
Popis: An integrated laser diode driver was realised using enhancement/depletion 0.3 Mym recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10Gbit/s with 50 Omega loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.
Databáze: OpenAIRE