| Autor: |
Oliver, Mark H, Schroeder, Jeremy L, Ewoldt, David, Wildeson, Isaac, rawat, vijay, Colby, Robert, Cantwell, Patrick R, Stach, E A, Sands, Timothy D |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
Birck and NCN Publications |
| Popis: |
An intermediate ZrN/AlN layer stack that enables the epitaxial growth of GaN on (111) silicon substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of similar to 1000 degrees C is reported. The epitaxial (111) ZrN layer provides an integral back reflector and Ohmic contact to n-type GaN, whereas the (0001) AlN layer serves as a reaction barrier, as a thermally conductive interface layer, and as an electrical isolation layer. Smooth (0001) GaN films less than 1 mu m thick grown on ZrN/AlN/Si yield 0002 x-ray rocking curve full width at half maximum values as low as 1230 arc sec. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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