| Autor: |
Hering, K.P., Kramm, B., Meyer, B.K., Brandt, Riley E., Buonassisi, Tonio |
| Přispěvatelé: |
Massachusetts Institute of Technology. Department of Mechanical Engineering, Massachusetts Institute of Technology. Photovoltaic Research Laboratory, Brandt, Riley E., Buonassisi, Tonio |
| Jazyk: |
angličtina |
| Rok vydání: |
2014 |
| Zdroj: |
Energy Procedia |
| Popis: |
Several growth methods were employed to investigate the photovoltaic behavior of GaN/Cu[subscript 2]O heterojunctions by depositing cuprous oxide thin films on top of gallium nitride templates. The templates consist of a thin layer of GaN:Si grown on a sapphire substrate by metal organic vapor deposition. The deposition procedure was followed up by photolithographic structuring and thermal evaporation of metal contacts. For device characterization, J-V characteristics and external quantum efficiency were measured, pointing to a possible energy barrier in the conduction band. To gain further insight X-ray photoelectron spectroscopy was applied. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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