| Autor: |
Sabbagh, D., Massa, L., Amitonov, S., Boter, J.M., Droulers, G., Eenink, H.G.J., Veldhorst, M., Vandersypen, L.M.K., Scappucci, G. |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Zdroj: |
Physical Review Applied, 12(1) |
| ISSN: |
2331-7019 |
| Popis: |
We investigate the structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-bar transistors with an oxide stack comprising 10 nm of Si28O2 and 17 nm of Al2O3 (equivalent oxide thickness of 17 nm) are fabricated in an academic cleanroom. A critical density for conduction of 1.75×1011cm-2 and a peak mobility of 9800cm2/Vs are measured at a temperature of 1.7 K. The Si28/SiO228 interface is characterized by a roughness of Δ=0.4nm and a correlation length of Λ=3.4nm. An upper bound for valley splitting energy of 480μeV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale Si28/SiO228 as a promising material platform to manufacture industrial spin qubits. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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