Electrical characteristics of B+and BF2+implanted poly-Si and poly-GexSi1-xas gate material for sub-0.25μm applications
| Autor: | Salm, C., Van Veen, D. T., Holleman, J., Woerlee, P. H., de Graaff, Henk C., van Kranenburg, Herma |
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| Jazyk: | angličtina |
| Rok vydání: | 1995 |
| Zdroj: | ESSDERC 1995-Proceedings of the 25th European Solid State Device Research Conference, 131-134 STARTPAGE=131;ENDPAGE=134;TITLE=ESSDERC 1995-Proceedings of the 25th European Solid State Device Research Conference |
| Popis: | The electrical properties of p-type doped poly-Si and poly-GexSi1-x, (x∼0.3) gate material were studied. The effect of dopant concentration and anneal temperature on the electrical behavior of these polycrystalline layers is investigated. A lower sheet resistance, higher Hall mobility and higher dopant activation is found for GexSi1-xcompared to Si at equal doping levels. MOS capacitors with B+and BF2+implanted gates were used to study boron penetration. Boron penetration is similar for Ge0.3Si0.7and Si. Gate depletion is dependent on the dopant activation hence GexSi1-xoffers the possibility for lower gate depletion compared to Si. |
| Databáze: | OpenAIRE |
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