| Autor: |
Rangaiah, SVP, Reddy, SV, Reddy, PN, Salkalachas, S, Rao, KSRK, Reddy, BPN |
| Rok vydání: |
1998 |
| Předmět: |
|
| Zdroj: |
IndraStra Global. |
| ISSN: |
2381-3652 |
| Popis: |
An attempt was made to study the deep level impurities and defects introduced into thyristor grade silicon under different processing conditions. DLTS, C-V and I-V measurements were carried out. The ideality factors of the diodes is around 1-7. Activation energy, trap density and minority carrier lifetime were measured. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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