Bias Temperature Instability Characterization of Advanced Gate Stacks

Autor:	Markus Wilde, Katsuyuki Fukutani, Akio Toda, Yuden Teraoka, Masayuki Terai, Motofumi Saitoh, Ziyuan Liu, Akitaka Yoshigoe, Shinji Fujieda, Yoshinao Miura
Rok vydání:	2007
Předmět:	Materials science Temperature instability business.industry Gate stack Optoelectronics business Characterization (materials science)
Zdroj:	ECS Transactions. 6:185-202
ISSN:	1938-6737 1938-5862
Popis:	We performed a physical and electrical characterization of the defects that would cause negative and positive bias temperature instability (NBTI, PBTI) in gate stacks that use SiO2, plasma-nitrided SiO2, HfSiON, and HfSiON with Ni- silicide electrodes. The characterization shows that the influence of impurities, damages and mechanical stress, derived from the newly incorporated materials and process technologies on the insulator bulk and insulator/Si interface must be suppressed to cope with the problems of NBTI and PBTI in the advanced gate stacks.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff20381946da706e7ea307a30b9435b2 https://doi.org/10.1149/1.2728797 Zobrazit plný text záznamu