Study of Hydrophilic Si Direct Bonding with Ultraviolet Ozone Activation for 3D Integration

Autor:	Gang Yih Chong, Chuan Seng Tan, Ji Fan
Rok vydání:	2013
Předmět:	Materials science Silicon Chemistry Annealing (metallurgy) Inorganic chemistry Analytical chemistry chemistry.chemical_element Direct bonding medicine.disease_cause Electronic Optical and Magnetic Materials Contact angle medicine Surface roughness Wafer Ultraviolet Helium
Zdroj:	ECS Transactions. 50:17-27
ISSN:	1938-6737 1938-5862
DOI:	10.1149/05007.0017ecst
Popis:	Wafer-level hydrophilic silicon direct bonding is demonstrated using ultraviolet ozone (UVO) activation. The activation is performed at room temperature in atmospheric ambient for 3, 6, 9, and 12 min under UVO exposure, respectively. The activation process helps to form a hydrophilic surface (contact angle < 7°) for hydrophilic bonding and to improve the surface roughness to C-V curves of the metal-oxide-semiconductor (MOS) capacitors which are fabricated using UVO clean on the Si surface prove that prolonged exposure to UVO can degrade the bonding quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::feb74801c324025cb80c0830a6af618a https://doi.org/10.1149/05007.0017ecst Zobrazit plný text záznamu