Localized Triggering of the Insulator-Metal Transition in VO2 Using a Single Carbon Nanotube
Autor: | Stephanie M. Bohaichuk, Gregory Pitner, Jason Li, Miguel Muñoz Rojo, Jaewoo Jeong, Feifei Lian, Mahesh G. Samant, Stuart S. P. Parkin, Connor J. McClellan, H.-S. Philip Wong, Eric Pop |
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Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
Materials science
Carbon nanotubes General Physics and Astronomy FOS: Physical sciences Insulator (electricity) 02 engineering and technology Scanning thermal microscopy Carbon nanotube 010402 general chemistry 01 natural sciences law.invention Scanning probe microscopy law Thermal engineering Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science Nanoscopic scale Kelvin probe force microscope Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics business.industry General Engineering Vanadium dioxide Materials Science (cond-mat.mtrl-sci) 021001 nanoscience & nanotechnology 0104 chemical sciences Scanning Probe Microscopy (SPM) Optoelectronics 0210 nano-technology business Insulator-metal transition Voltage |
Zdroj: | ACS nano, 13(10), 11070-11077. American Chemical Society |
ISSN: | 1936-0851 |
DOI: | 10.1021/acsnano.9b03397 |
Popis: | Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ~1 nm wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single metallic CNTs switch the adjacent VO2 at less than half the voltage and power required by control devices without a CNT, with switching power as low as ~85 ${\mu}W$ at 300 nm device lengths. We also obtain potential and temperature maps of devices during operation using Kelvin Probe Microscopy (KPM) and Scanning Thermal Microscopy (SThM). Comparing these with three-dimensional electrothermal simulations, we find that the local heating of the VO2 by the CNT play a key role in the IMT. These results demonstrate the ability to trigger IMT in VO2 using nanoscale heaters, and highlight the significance of thermal engineering to improve device behaviour. |
Databáze: | OpenAIRE |
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