Silicon Surface Passivation by Al2O3: Recombination Parameters and Inversion Layer Solar Cells
| Autor: | A. Cosceev, Jan Schmidt, Florian Werner |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Passivation Silicon Band gap chemistry.chemical_element Aluminum oxide aluminum oxide Atomic layer deposition Energy(all) Surface charge passivation Dewey Decimal Classification::300 | Sozialwissenschaften Soziologie Anthropologie::330 | Wirtschaft::333 | Boden- und Energiewirtschaft::333 7 | Natürliche Ressourcen Energie und Umwelt Konferenzschrift Sheet resistance Inversion layer solar cell inversion layer solar cell capture cross section Charge density Capture cross section chemistry ddc:333.7 Atomic physics Short circuit ddc:333 7 |
| Zdroj: | Energy Procedia 27 (2012) |
| ISSN: | 1876-6102 |
| DOI: | 10.1016/j.egypro.2012.07.070 |
| Popis: | The interface between p- and n-type FZ-Si and an amorphous aluminum oxide (Al2O3) surface passivation layer deposited by plasma-assisted atomic layer deposition (ALD) was investigated by frequency-dependent conductance measurements. The hole capture cross section in the lower half of the bandgap, σp = (4±3)×10 -16 cm2, was found to be independent of energy. The electron capture cross section σn in the upper half of the bandgap decreases from σn = (7±4)×10-15 cm2 at midgap over two orders of magnitude towards the conduction band edge. Numerical simulations of the effective surface recombination velocity based on these recombination parameters show a good agreement with experimental surface recombination velocities for a wide range of excess carrier and surface charge densities. Carrier transport in the inversion layer formed at the n-Si/Al2O3 interface was investigated yielding a sheet resistance of 15 kΩ/, which was reduced to 6 kΩ/ for a surface charge density of -2×1013 cm-2 obtained by corona charging. The applicability of Al2O3 inversion layers as emitters in n-type inversion layer solar cells was demonstrated by short circuit current densities of up to 25 mA/cm2, which show a pronounced dependence on surface charge density. BMU/0325050 |
| Databáze: | OpenAIRE |
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