Direct measurement of the band gap and Fermi level position at InN(112¯0)

Autor:	L. Ivanova, Mario Dähne, Holger Eisele, Andrea Lenz, A. Sabitova, Ph. Ebert, Y.-L. Hong, Shangjr Gwo, S. Schaafhausen
Rok vydání:	2011
Předmět:	Physics and Astronomy (miscellaneous) Condensed matter physics Chemistry Band gap Scanning tunneling spectroscopy Fermi level Fermi energy Semimetal law.invention symbols.namesake law symbols ddc:530 Direct and indirect band gaps Scanning tunneling microscope Surface states
Zdroj:	Applied physics letters 98, 062103 (2011). doi:10.1063/1.3553022
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.3553022
Popis:	A nonpolar stoichiometric InN(11 (2) over bar0) surface freshly cleaved inside UHV was investigated by scanning tunneling microscopy and spectroscopy. Due to the absence of intrinsic surface states in the band gap, scanning tunneling spectroscopy yields directly the fundamental bulk band gap of 0.7 +/- 0.1 eV. The Fermi energy is pinned 0.3 eV below the conduction band minimum due to cleavage induced defect states. Thus, intrinsic electron accumulation can be excluded for this surface. Electron accumulation is rather an extrinsic effect due to surface contamination or material decomposition, but not an intrinsic material property of InN. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553022]
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc96947106558e67020c49d69c816623 https://doi.org/10.1063/1.3553022 Zobrazit plný text záznamu