A sample chamber for in situ high-energy X-ray studies of crystal growth at deeply buried interfaces in harsh environments
| Autor: | Veijo Honkimäki, Hugo Vitoux, Bernard Gorges, A.E.F. de Jong, Elias Vlieg, Vedran Vonk |
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| Rok vydání: | 2015 |
| Předmět: |
In situ
High energy Applied Materials Science Materials science business.industry X-ray Mineralogy Crystal growth Solid State Chemistry Condensed Matter Physics Synchrotron law.invention Inorganic Chemistry law Chamber design ddc:540 Materials Chemistry Optoelectronics Thin film Sample chamber business |
| Zdroj: | Journal of Crystal Growth, 420, pp. 84-89 Journal of Crystal Growth, 420, 84-89 Journal of crystal growth 420, 84-89 (2015). doi:10.1016/j.jcrysgro.2015.02.105 |
| ISSN: | 0022-0248 |
| Popis: | We introduce a high pressure high temperature chamber for in situ synchrotron X-ray studies. The chamber design allows for in situ studies of thin film growth from solution at deeply buried interfaces in harsh environments. The temperature can be controlled between room temperature and 1073 K while the pressure can be set as high as 50 bar using a variety of gases including N$_{2}$ and NH$_{3}$. The formation of GaN on the surface of a Ga$_{13}$Na$_{7}$ melt at 1073 K and 50 bar of N$_{2}$ is presented as a performance test. |
| Databáze: | OpenAIRE |
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