Charge states and lattice sites of dilute implanted Sn in ZnO
| Autor: | Krish Bharuth-Ram, H. P. Gislason, T. E. Mølholt, Sveinn Olafsson, A. Mokhles Gerami, Haraldur P. Gunnlaugsson, V Adoons, Hilary Masenda, Guido Langouche, I. Unzueta, Andrei Zenkevich, P.B. Krastev, Karl Johnston, Roberto Mantovan, M. Ncube, Deena Naidoo, Jens Röder, Yury Matveyev |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Charge neutrality Analytical chemistry Defect free 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Acceptor Ion implantation Angular correlation Lattice (order) 0103 physical sciences Mössbauer spectroscopy General Materials Science Atomic physics 010306 general physics 0210 nano-technology Single crystal |
| Zdroj: | Journal of Physics: Condensed Matter |
| ISSN: | 0953-8984 |
| DOI: | 10.1088/1361-648x/aa5e95 |
| Popis: | The common charge states of Sn are 2+ and 4+. While charge neutrality considerations favour 2+ to be the natural charge state of Sn in ZnO, there are several reports suggesting the 4+ state instead. In order to investigate the charge states, lattice sites, and the effect of the ion implantation process of dilute Sn atoms in ZnO, we have performed 119Sn emission Mossbauer spectroscopy on ZnO single crystal samples following ion implantation of radioactive 119In (T ½ = 2.4 min) at temperatures between 96 K and 762 K. Complementary perturbed angular correlation measurements on 111mCd implanted ZnO were also conducted. Our results show that the 2+ state is the natural charge state for Sn in defect free ZnO and that the 4+ charge state is stabilized by acceptor defects created in the implantation process. |
| Databáze: | OpenAIRE |
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