Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study
| Autor: | Carlo Cazzaniga, Eduardo Augusto Bezerra, Maria Kastriotou, Christian Poivey, Lucas Matana Luza, Daniel Soderstrom, Luigi Dilillo, Andre Martins Pio de Mattos |
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| Přispěvatelé: | TEST (TEST), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), University of Jyväskylä (JYU), Space Technology Research Laboratory [UFSC] (SpaceLab), Universidade Federal de Santa Catarina = Federal University of Santa Catarina [Florianópolis] (UFSC), ISIS Facility, STFC Rutherford Appleton Laboratory (RAL), Science and Technology Facilities Council (STFC)-Science and Technology Facilities Council (STFC), European Space Agency (ESA) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Neutrons
Computer science Payload käyttömuistit Stuck Bits neutronit muistit (tietotekniikka) Technology impact SEE Refresh rate [SPI.TRON]Engineering Sciences [physics]/Electronics Radiation Effects Beamline säteilyfysiikka Neutron Node (circuits) [INFO.INFO-ES]Computer Science [cs]/Embedded Systems [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics SDRAM Neutron irradiation Simulation Random access avaruustekniikka |
| Zdroj: | 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS 2021) 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS 2021), Jun 2021, Montpellier, France. ⟨10.1109/DTIS53253.2021.9505143⟩ DTIS DTIS 2021-16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era DTIS 2021-16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, Jun 2021, Montpellier, France. ⟨10.1109/DTIS53253.2021.9505143⟩ 2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) |
| DOI: | 10.1109/DTIS53253.2021.9505143⟩ |
| Popis: | International audience; This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under an atmospheric-like neutron spectrum at the ChipIr beamline in the Rutherford Appleton Laboratories, UK. The memories were tested with a reduced refresh rate to expose more single-event upsets and under similar conditions provided by a board specifically developed for this type of study in test facilities. The board has also been designed to be used as a nanosatellite payload in order to perform similar tests. The neutron-induced failures were studied and characterized, presenting the occurrence of single-bit upsets and stuck bits. The cross sections for each type of event and technology node show that the 110 nm model is more sensitive to neutron-induced single-event effects than the other models. |
| Databáze: | OpenAIRE |
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